2003. 6. 16 1/1 semiconductor technical data BD136 epitaxial planar pnp transistor revision no : 0 general purpose application. features high current. (max. : -1.5a) low voltage (max. : -45v) dc current gain : h fe =40min. @i c =-0.15a complementary to bd135. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.2 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 2.3 0.1 0.65 0.15 1.6 3.4 max b 1 23 + _ + _ + _ 15.5 0.5 + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -45 v collector-emitter voltage v ceo -45 v emitter-base voltage v ebo -5 v collector current i c -1.5 a base current i b -0.5 a collector power dissipation ta=25 p c 1.25 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-30v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -10 a collector-emitter breakdown voltage v (br)ceo i c =-30ma, i b =0 -45 - - v dc current gain h fe (1) i c =-5ma, v ce =-2v 25 - - h fe (2) i c =-150ma, v ce =-2v 40 - 250 h fe (3) i c =-500ma, v ce =-2v 25 - - collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - - -0.5 v base-emitter voltage v be v ce =-2v, i c =-500ma - - -1.0 v transition frequency f t v ce =-5v, i c =-50ma - 160 - mhz
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